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| e PTB 20220 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20220 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power for PEP applications, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 15 Watts, 915-960 MHz Class AB Characteristics 50% Collector Efficiency at 15 Watts Surface Mountable Gold Metallization Silicon Nitride Passivated Typical Power Out and Efficiency vs. Power In 20 60 Efficiency Output Power 10 30 Output Power (Watts) Efficiency (%) 15 45 20 22 0 LO TC OD E VCC = 25 V 5 ICQ = 24 mA f = 960 MHz 0.0 0.5 1.0 1.5 2.0 2.5 15 0 0 Input Power (Watts) Package 20232 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 65 65 4.0 4.0 37 0.21 -40 to +150 4.7 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20220 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain Output Capacitance (100% Tested) e Conditions IB = 0 A, IC = 5 mA VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA VCC = 25 V, IE = 0 A, f = 1 MHz Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Cob Min 25 65 4 35 -- Typ -- -- 5 -- 14.1 Max -- -- -- -- -- Units Volts Volts Volts -- pF RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, Pout = 5 W, ICQ = 24 mA, f = 960 MHz) Gain Compression (VCC = 25 Vdc, Pout = 15 W, ICQ = 24 mA, f = 960 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 15 W, ICQ = 24 mA, f = 960 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 15 W, ICQ = 24 mA, f = 960 MHz --all phase angles at frequency of test) Symbol Gpe P-1dB C Min 8.75 15 50 -- Typ -- -- -- -- Max -- -- -- 30:1 Units dB Watts % -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 15 W, ICQ = 24 mA) Z Source Z Load Frequency MHz 915 935 960 R 2.26 1.99 1.75 Z Source jX -3.40 -2.84 -2.41 R 6.12 6.30 6.50 Z Load jX 5.42 5.51 5.52 Z0 = 50 2 5/14/98 e Typical Performance Gain vs. Frequency (as measured in a broadband circuit) 12 PTB 20220 VCC = 25 V 11 Gain (dB) ICQ = 24 mA Pin = 0.75 W 10 9 8 910 920 930 940 950 960 970 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20220 Uen Rev. C 09-28-98 3 5/14/98 |
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